Influence of MS interface transport on the current-voltage characteristic of MCT PV device MS界面输运特性对碲镉汞光伏器件I-V特性的影响
The current-voltage measurements at low temperatures showed a typical ( diode) characteristic with a threshold voltage about 4.0 V at forward bias. 在低温下,二极管的I-V特性曲线显示了典型的p-n结整流特性,并且具有很低的开启电压(4V)。
In the case of small capacitance, effects of internal and external noises on dc current-voltage characteristic of the Josephson junction are studied. 在零电容条件下,研究了内外噪声对约瑟夫逊结中直流伏安特性曲线的影响。
Research of metal oxide non-linear resistance current-voltage characteristic testing 金属氧化物非线性电阻片伏安特性测试的研究
Current-Voltage Characteristic of HEMT HEMT伏安特性
The results show that different applied positions of the external transverse gate voltage can effectively tune the current-voltage(ⅰ-ⅴ) characteristic of molecular devices. 我们的研究结果发现:外部横向门电压的不同施加位置能够有效地调节分子器件的电流-电压(Ⅰ-Ⅴ)特性。
When bias applies, the nonlinear current-voltage characteristic occurs resulting from the competition between linear increase of voltage and the increase of shift step of transmission spectrum. 加上偏压后,在0V到1V范围内,由于偏压的线性增加与其引起的透射谱移动幅度增加的竞争,造成系统电流-电压的非线性特性。
This experiment made use of multi-source organic molecular vapor phase deposition system and improved production process of this system. Prepared ITO/ NPB/ Alq3/ LiF/ Al multi-layer organic light-emitting device, tested current-voltage characteristic, Brightness-voltage characteristic and electroluminescence spectra of the device. 本文利用多源自动控温有机分子气相淀积系统制备了ITO/NPB/Alq3/LiF/Al多层有机电致发光器件,测试了器件的电流电压特性,器件的亮度电压特性,器件的电致发光光谱。